Технічний опис SIHF530S-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W, Kind of channel: enhancement, Pulsed drain current: 56A, Gate-source voltage: ±20V, Power dissipation: 88W, Drain-source voltage: 100V, Kind of package: reel; tape, Case: D2PAK; TO263, Mounting: SMD, Polarisation: unipolar, Type of transistor: N-MOSFET, Gate charge: 26nC, On-state resistance: 0.16Ω, Drain current: 10A.
Інші пропозиції SIHF530S-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SIHF530S-GE3 | Виробник : Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 100V |
товару немає в наявності |
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| SIHF530S-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Kind of channel: enhancement Pulsed drain current: 56A Gate-source voltage: ±20V Power dissipation: 88W Drain-source voltage: 100V Kind of package: reel; tape Case: D2PAK; TO263 Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 26nC On-state resistance: 0.16Ω Drain current: 10A |
товару немає в наявності |