SIHF620STRL-GE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
Mounting: SMD
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 3.3A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
Mounting: SMD
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 3.3A
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SIHF620STRL-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W, Mounting: SMD, On-state resistance: 0.8Ω, Type of transistor: N-MOSFET, Power dissipation: 50W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 14nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 18A, Case: D2PAK; TO263, Drain-source voltage: 200V, Drain current: 3.3A, кількість в упаковці: 1 шт.
Інші пропозиції SIHF620STRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHF620STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W Mounting: SMD On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 18A Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 3.3A |
товару немає в наявності |