SIHF640L-GE3 VISHAY
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Mounting: THT
Case: I2PAK; TO262
Kind of package: tube
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Mounting: THT
Case: I2PAK; TO262
Kind of package: tube
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SIHF640L-GE3 VISHAY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W, Mounting: THT, Case: I2PAK; TO262, Kind of package: tube, Drain-source voltage: 200V, Drain current: 11A, On-state resistance: 0.18Ω, Type of transistor: N-MOSFET, Power dissipation: 130W, Polarisation: unipolar, Gate charge: 70nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 72A, кількість в упаковці: 1 шт.
Інші пропозиції SIHF640L-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHF640L-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Mounting: THT Case: I2PAK; TO262 Kind of package: tube Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 72A |
товару немає в наявності |