Технічний опис SIHFBC20L-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 1.4A, Pulsed drain current: 8A, Power dissipation: 50W, Case: I2PAK; TO262, Gate-source voltage: ±20V, On-state resistance: 4.4Ω, Mounting: THT, Gate charge: 18nC, Kind of package: tube, Kind of channel: enhanced.
Інші пропозиції SIHFBC20L-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFBC20L-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 8A Power dissipation: 50W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| SIHFBC20L-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 8A Power dissipation: 50W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |