SIHFBC20L-GE3 VISHAY
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
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Технічний опис SIHFBC20L-GE3 VISHAY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 1.4A, Power dissipation: 50W, Case: I2PAK; TO262, Gate-source voltage: ±20V, On-state resistance: 4.4Ω, Mounting: THT, Gate charge: 18nC, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 8A.