Технічний опис SIHFBF20S-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W, Mounting: SMD, Polarisation: unipolar, Gate charge: 38nC, Drain current: 1.1A, Power dissipation: 54W, Pulsed drain current: 6.8A, Drain-source voltage: 900V, On-state resistance: 8Ω, Gate-source voltage: ±20V, Case: D2PAK; TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube.
Інші пропозиції SIHFBF20S-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHFBF20S-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Mounting: SMD Polarisation: unipolar Gate charge: 38nC Drain current: 1.1A Power dissipation: 54W Pulsed drain current: 6.8A Drain-source voltage: 900V On-state resistance: 8Ω Gate-source voltage: ±20V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube |
товару немає в наявності |