Технічний опис SIHFBF20STRL-GE3 Vishay / BC Components
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W, Mounting: SMD, Gate charge: 38nC, Polarisation: unipolar, Drain current: 1.1A, Kind of channel: enhancement, Drain-source voltage: 900V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: D2PAK; TO263, On-state resistance: 8Ω, Pulsed drain current: 6.8A, Power dissipation: 54W.
Інші пропозиції SIHFBF20STRL-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHFBF20STRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Mounting: SMD Gate charge: 38nC Polarisation: unipolar Drain current: 1.1A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; TO263 On-state resistance: 8Ω Pulsed drain current: 6.8A Power dissipation: 54W |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHFBF20STRL-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: SMD
Gate charge: 38nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
On-state resistance: 8Ω
Pulsed drain current: 6.8A
Power dissipation: 54W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: SMD
Gate charge: 38nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
On-state resistance: 8Ω
Pulsed drain current: 6.8A
Power dissipation: 54W
товару немає в наявності
В кошику
од. на суму грн.