Технічний опис SIHFBF20STRL-GE3 Vishay / BC Components
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 1.1A, Pulsed drain current: 6.8A, Power dissipation: 54W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 8Ω, Mounting: SMD, Gate charge: 38nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції SIHFBF20STRL-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHFBF20STRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.1A Pulsed drain current: 6.8A Power dissipation: 54W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHFBF20STRL-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.