SIHFR010-GE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Gate-source voltage: ±20V
Pulsed drain current: 33A
Kind of channel: enhanced
Case: DPAK; TO252
Drain-source voltage: 50V
Drain current: 8.2A
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Gate-source voltage: ±20V
Pulsed drain current: 33A
Kind of channel: enhanced
Case: DPAK; TO252
Drain-source voltage: 50V
Drain current: 8.2A
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
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Технічний опис SIHFR010-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252, Mounting: SMD, Type of transistor: N-MOSFET, Power dissipation: 25W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 10nC, Gate-source voltage: ±20V, Pulsed drain current: 33A, Kind of channel: enhanced, Case: DPAK; TO252, Drain-source voltage: 50V, Drain current: 8.2A, On-state resistance: 0.2Ω, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR010-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFR010-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Gate-source voltage: ±20V Pulsed drain current: 33A Kind of channel: enhanced Case: DPAK; TO252 Drain-source voltage: 50V Drain current: 8.2A On-state resistance: 0.2Ω |
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