SIHFR014TR-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252, Drain-source voltage: 60V, Drain current: 4.9A, On-state resistance: 0.2Ω, Type of transistor: N-MOSFET, Power dissipation: 25W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 11nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 31A, Mounting: SMD, Case: DPAK; TO252, кількість в упаковці: 1 шт.