Технічний опис SIHFR110TR-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Case: DPAK; TO252, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 8.3nC, On-state resistance: 0.54Ω, Drain current: 2.7A, Pulsed drain current: 17A, Gate-source voltage: ±20V, Power dissipation: 25W, Drain-source voltage: 100V.
Інші пропозиції SIHFR110TR-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHFR110TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 8.3nC On-state resistance: 0.54Ω Drain current: 2.7A Pulsed drain current: 17A Gate-source voltage: ±20V Power dissipation: 25W Drain-source voltage: 100V |
товару немає в наявності |