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Технічний опис SIHFR110TR-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Power dissipation: 25W, Mounting: SMD, Kind of package: reel; tape, Case: DPAK; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Pulsed drain current: 17A, Drain current: 2.7A, Gate charge: 8.3nC, On-state resistance: 0.54Ω, Gate-source voltage: ±20V, Kind of channel: enhancement.
Інші пропозиції SIHFR110TR-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHFR110TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Power dissipation: 25W Mounting: SMD Kind of package: reel; tape Case: DPAK; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 17A Drain current: 2.7A Gate charge: 8.3nC On-state resistance: 0.54Ω Gate-source voltage: ±20V Kind of channel: enhancement |
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