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Технічний опис SIHFR310TR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252, On-state resistance: 3.6Ω, Mounting: SMD, Pulsed drain current: 6A, Power dissipation: 25W, Gate charge: 12nC, Polarisation: unipolar, Drain current: 1.1A, Kind of channel: enhancement, Drain-source voltage: 400V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: DPAK; TO252.
Інші пропозиції SIHFR310TR-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHFR310TR-GE3 | Vishay Semiconductors | MOSFETs TO252 400V 1.7A N-CH MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIHFR310TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 On-state resistance: 3.6Ω Mounting: SMD Pulsed drain current: 6A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: 1.1A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHFR310TR-GE3 |
Виробник: Vishay Semiconductors
MOSFETs TO252 400V 1.7A N-CH MOSFET
MOSFETs TO252 400V 1.7A N-CH MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| SIHFR310TR-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
On-state resistance: 3.6Ω
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
On-state resistance: 3.6Ω
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
товару немає в наявності
В кошику
од. на суму грн.