Технічний опис SIHFR420TR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 1.5A, Pulsed drain current: 8A, Power dissipation: 42W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 3Ω, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhanced.
Інші пропозиції SIHFR420TR-GE3
| Фото | Назва | Виробник | Інформація |
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| SIHFR420TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
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SIHFR420TR-GE3 | Виробник : Vishay / Siliconix | MOSFET |
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| SIHFR420TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |