Технічний опис SIHFR9014TRL-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -3.2A, Pulsed drain current: -20A, Power dissipation: 25W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції SIHFR9014TRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SIHFR9014TRL-GE3 | Виробник : Vishay Semiconductors | MOSFETs MOSFET P-CHANNEL 60V |
товару немає в наявності |
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| SIHFR9014TRL-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |