Технічний опис SIHFR9014TRL-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W, Pulsed drain current: -20A, Power dissipation: 25W, Gate charge: 12nC, Polarisation: unipolar, Drain current: -3.2A, Kind of channel: enhanced, Drain-source voltage: -60V, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: DPAK; TO252, On-state resistance: 0.5Ω, Gate-source voltage: ±20V, Mounting: SMD, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR9014TRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFR9014TRL-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
||
| SIHFR9014TRL-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD |
товар відсутній |