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Технічний опис SIHFR9120TR-GE3 Vishay Semiconductors
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -5.6A, Pulsed drain current: -22A, Power dissipation: 42W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.6Ω, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції SIHFR9120TR-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHFR9120TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHFR9120TR-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.