Технічний опис SIHFU9310-GE3 Vishay
Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -400V, Drain current: -1.1A, Pulsed drain current: -7.2A, Power dissipation: 50W, Case: IPAK; TO251, Gate-source voltage: ±20V, On-state resistance: 7Ω, Mounting: THT, Gate charge: 13nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHFU9310-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFU9310-GE3 | Виробник : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIHFU9310-GE3 | Виробник : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |