Технічний опис SIHLU014-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; IPAK,TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 4.9A, Pulsed drain current: 31A, Power dissipation: 25W, Case: IPAK; TO251, Gate-source voltage: ±10V, On-state resistance: 0.28Ω, Mounting: THT, Gate charge: 8.4nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHLU014-GE3
| Фото | Назва | Виробник | Інформація |
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| SIHLU014-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHLU014-GE3 | Виробник : Vishay / Siliconix | MOSFET |
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| SIHLU014-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |