Технічний опис SIL04P06-TP Micro Commercial Components
Description: MOSFET P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A, Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V, Power Dissipation (Max): 2W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-6L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.
Інші пропозиції SIL04P06-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SIL04P06-TP | Виробник : Micro Commercial Co |
Description: MOSFET P-CHANNEL MOSFET Packaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V Power Dissipation (Max): 2W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
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