Технічний опис SISS176LDN-T1-UE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 42.3A, Mounting: SMD, Gate charge: 12.6nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 42.3A, Kind of channel: enhancement, Drain-source voltage: 70V, Type of transistor: N-MOSFET, Gate-source voltage: ±12V, Kind of package: reel; tape, Case: PowerPAK® 1212-8, On-state resistance: 10.9mΩ.
Інші пропозиції SISS176LDN-T1-UE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SISS176LDN-T1-UE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 42.3A Mounting: SMD Gate charge: 12.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 42.3A Kind of channel: enhancement Drain-source voltage: 70V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: PowerPAK® 1212-8 On-state resistance: 10.9mΩ |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. |
| SISS176LDN-T1-UE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 42.3A
Mounting: SMD
Gate charge: 12.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 42.3A
Kind of channel: enhancement
Drain-source voltage: 70V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 10.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 42.3A
Mounting: SMD
Gate charge: 12.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 42.3A
Kind of channel: enhancement
Drain-source voltage: 70V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 10.9mΩ
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.