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SK 10 GD 126 ET 24910260 SEMIKRON DANFOSS

SK10GD126ET.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 16A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: SEMITOP3
Gate-emitter voltage: ±20V
Collector current: 8A
Topology: IGBT three-phase bridge OE output; thermistor
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Технічний опис SK 10 GD 126 ET 24910260 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3, Electrical mounting: Press-in PCB, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 16A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Case: SEMITOP3, Gate-emitter voltage: ±20V, Collector current: 8A, Topology: IGBT three-phase bridge OE output; thermistor.