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SK 10 GD 126 ET 24910260 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; thermistor
Max. off-state voltage: 1.2kV
Collector current: 8A
Case: SEMITOP3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mechanical mounting: screw

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Технічний опис SK 10 GD 126 ET 24910260 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge OE output; thermistor, Max. off-state voltage: 1.2kV, Collector current: 8A, Case: SEMITOP3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 16A, Mechanical mounting: screw.