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SK 30 DGDL 066 ET 24912650 SEMIKRON DANFOSS


SK30DGDL066ET.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A
Case: SEMITOP3
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Pulsed collector current: 60A
Application: Inverter; motors
Electrical mounting: Press-in PCB
Power: 4kW
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+5645.84 грн
3+4636.79 грн
10+4165.63 грн
В кошику  од. на суму  грн.
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Технічний опис SK 30 DGDL 066 ET 24912650 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A, Case: SEMITOP3, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Pulsed collector current: 60A, Application: Inverter; motors, Electrical mounting: Press-in PCB, Power: 4kW, Gate-emitter voltage: ±20V, Collector current: 30A, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT.