Продукція > SEMIKRON DANFOSS > SK100GD12T7ETE2 24922310

SK100GD12T7ETE2 24922310 SEMIKRON DANFOSS


SK100GD12T7ETE2.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 100A; screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge OE output; thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SEMITOPE2
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SK100GD12T7ETE2 24922310 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 100A; screw, Application: for UPS; Inverter; photovoltaics, Topology: IGBT three-phase bridge OE output; thermistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Case: SEMITOPE2, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor.