SK100GD12T7ETE2 24922310 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 100A; screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge OE output; thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SEMITOPE2
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
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Технічний опис SK100GD12T7ETE2 24922310 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 100A; screw, Application: for UPS; Inverter; photovoltaics, Topology: IGBT three-phase bridge OE output; thermistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Case: SEMITOPE2, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor.