Технічний опис SK60GAL123 SEMIKRON
- IGBT MODULE, CHOPPER, 1200V
- Module Configuration:1 Pair Series Connection
- DC Collector Current:58A
- Max Voltage Vce Sat:3V
- Collector-to-Emitter Breakdown Voltage:1200V
- Operating Temperature Range:-40`C to +150`C
- SVHC:No SVHC
- Case Style:SEMITOP 2
- External Depth:28mm
- External Width:40.5mm
- No. of Transistors:1
- Termination Type:Screw
- Transistor Polarity:N Channel
- Transistor Type:IGBT Module
- Av Current Ic:58A
- Current Temperature:25`C
- Fixing Centres:38mm
- Fixing Hole Diameter:2mm
- Max Current Ic Continuous a:58A
- Max Current Ic Continuous b:40A
- Power Dissipation Pd:600W
- Pulsed Current Icm:57A
- Rise Time:90ns
- SMD Marking:SEMITOP2
- Voltage:1200V
- Voltage Vces:1200V