Технічний опис SKB06N60HSATMA1 Infineon Technologies
Description: IGBT 600V 12A 68W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 6A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 11ns/196ns, Switching Energy: 190µJ, Test Condition: 400V, 6A, 50Ohm, 15V, Gate Charge: 33 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 68 W.
Інші пропозиції SKB06N60HSATMA1
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SKB06N60HSATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 6A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 11ns/196ns Switching Energy: 190µJ Test Condition: 400V, 6A, 50Ohm, 15V Gate Charge: 33 nC Part Status: Obsolete Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 24 A Power - Max: 68 W |
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