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SKIIP 03NEB066V3 25232360 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F92B20ED6000C4&compId=SKIIP03NEB066V3.pdf?ci_sign=ed83a9a6c97ee8c94ada33fdf07f0160e8fc73cd pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 15A
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 0
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Power: 3kW
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Технічний опис SKIIP 03NEB066V3 25232360 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 15A, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 0, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 15A, Pulsed collector current: 30A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Power: 3kW.