SKIIP 10NAB12T4V1 25231660 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 4A
Case: MiniSKiiP® 1
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SKIIP 10NAB12T4V1 25231660 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 4A, Case: MiniSKiiP® 1, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 12A, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 10NAB12T4V1 25231660
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SKIIP 10NAB12T4V1 25231660 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 4A Case: MiniSKiiP® 1 Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Pulsed collector current: 12A Mechanical mounting: screw |
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