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SKIIP 10NAB12T4V1 25231660 SEMIKRON DANFOSS

SKIIP10NAB12T4V1.pdf SEMIKRON_Product_Variants.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A
Case: MiniSKiiP® 1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 12A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 4A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
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Технічний опис SKIIP 10NAB12T4V1 25231660 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A, Case: MiniSKiiP® 1, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 12A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 4A, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge.