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SKIIP 10NAB12T4V1 25231660 SEMIKRON DANFOSS

SKIIP10NAB12T4V1.pdf SEMIKRON_Product_Variants.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 1
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
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Технічний опис SKIIP 10NAB12T4V1 25231660 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 1, Electrical mounting: Press-Fit, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Collector current: 4A, Pulsed collector current: 12A, Gate-emitter voltage: ±20V, Max. off-state voltage: 1.2kV, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge.