Продукція > SEMIKRON DANFOSS > SKIIP 11AC12T4V1 25231610

SKIIP 11AC12T4V1 25231610 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CB2DD93BD4BC0D6&compId=SKIIP11AC12T4V1.pdf?ci_sign=64cc77ae17e4773e4d9a5bb1de0fe8ec3c6d0308 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; screw
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Case: MiniSKiiP® 1
Semiconductor structure: transistor/transistor
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Max. off-state voltage: 1.2kV
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Технічний опис SKIIP 11AC12T4V1 25231610 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; screw, Electrical mounting: Press-Fit, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge OE output; thermistor, Case: MiniSKiiP® 1, Semiconductor structure: transistor/transistor, Collector current: 8A, Gate-emitter voltage: ±20V, Pulsed collector current: 24A, Max. off-state voltage: 1.2kV.