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SKIIP 11HEB066V1 25230830 SEMIKRON DANFOSS

SKIIP11HEB066V1.pdf SEMIKRON_Product_Variants.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
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Технічний опис SKIIP 11HEB066V1 25230830 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Type of semiconductor module: IGBT, Semiconductor structure: diode/thyristor/IGBT, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Max. off-state voltage: 0.6kV, Collector current: 15A, Case: MiniSKiiP® 1, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Mechanical mounting: screw.