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SKIIP 11NAB066V1 25230580 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 6A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Power: 1.5kW
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
кількість в упаковці: 1 шт

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Технічний опис SKIIP 11NAB066V1 25230580 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 6A, Pulsed collector current: 12A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Power: 1.5kW, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, кількість в упаковці: 1 шт.

Інші пропозиції SKIIP 11NAB066V1 25230580

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	SKIIP 11NAB066V1 25230580	Виробник : SEMIKRON DANFOSS	Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A Mechanical mounting: screw Electrical mounting: Press-Fit Collector current: 6A Pulsed collector current: 12A Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Power: 1.5kW Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Case: MiniSKiiP® 1	товару немає в наявності	В кошику од. на суму грн.