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SKIIP 11NAB066V1 25230580 SEMIKRON DANFOSS

SKIIP11NAB066V1.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 12A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit
Power: 1.5kW
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Collector current: 6A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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Технічний опис SKIIP 11NAB066V1 25230580 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 12A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 0.6kV, Electrical mounting: Press-Fit, Power: 1.5kW, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Collector current: 6A, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge.