SKIIP 12NAB066V1 25230590 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Power: 2.2kW
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
кількість в упаковці: 1 шт
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Технічний опис SKIIP 12NAB066V1 25230590 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 10A, Pulsed collector current: 20A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Power: 2.2kW, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 12NAB066V1 25230590
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SKIIP 12NAB066V1 25230590 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A Mechanical mounting: screw Electrical mounting: Press-Fit Collector current: 10A Pulsed collector current: 20A Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Power: 2.2kW Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Case: MiniSKiiP® 1 |
товару немає в наявності |