Продукція > SEMIKRON DANFOSS > SKIIP 12NAB12T4V1 25231440
SKIIP 12NAB12T4V1 25231440

SKIIP 12NAB12T4V1 25231440 SEMIKRON DANFOSS


SKiiP12NAB12T4V1.pdf SEMIKRON_Product_Variants.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 45A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.6kV
Power: 5.5kW
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: MiniSKiiP® 1
Semiconductor structure: diode/transistor
Electrical mounting: Press-Fit
Type of semiconductor module: IGBT
на замовлення 40 шт:

термін постачання 14-30 дні (днів)
Кількість Ціна
1+3552.13 грн
3+2913.47 грн
10+2619.10 грн
В кошику  од. на суму  грн.
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Технічний опис SKIIP 12NAB12T4V1 25231440 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Collector current: 15A, Pulsed collector current: 45A, Gate-emitter voltage: ±20V, Max. off-state voltage: 1.6kV, Power: 5.5kW, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Case: MiniSKiiP® 1, Semiconductor structure: diode/transistor, Electrical mounting: Press-Fit, Type of semiconductor module: IGBT.