Продукція > SEMIKRON DANFOSS > SKIIP 13NEB066V1 25231430

SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A
Collector current: 43A
Pulsed collector current: 60A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
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Технічний опис SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A, Collector current: 43A, Pulsed collector current: 60A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, кількість в упаковці: 1 шт.

Інші пропозиції SKIIP 13NEB066V1 25231430

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SKIIP 13NEB066V1 25231430 Виробник : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A
Collector current: 43A
Pulsed collector current: 60A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.