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SKIIP 14NAB066V1 25230610 SEMIKRON DANFOSS

SKIIP14NAB066V1.pdf SEMIKRON_Product_Variants.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A
Power: 4kW
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
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Технічний опис SKIIP 14NAB066V1 25230610 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A, Power: 4kW, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 1, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Electrical mounting: Press-Fit, Mechanical mounting: screw, Max. off-state voltage: 0.6kV, Collector current: 20A, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge.