
SKIIP 14NAB066V1 25230610 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Power: 4kW
кількість в упаковці: 1 шт
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Технічний опис SKIIP 14NAB066V1 25230610 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 0.6kV, Collector current: 20A, Case: MiniSKiiP® 1, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Mechanical mounting: screw, Power: 4kW, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 14NAB066V1 25230610
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SKIIP 14NAB066V1 25230610 | Виробник : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 20A Case: MiniSKiiP® 1 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Power: 4kW |
товару немає в наявності |