Продукція > SEMIKRON DANFOSS > SKIIP 22NAB12T4V2 25232140

SKIIP 22NAB12T4V2 25232140 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CAF4625FC68C0D6&compId=SKIIP22NAB12T4V2.pdf?ci_sign=339bf9deda3a3a59ea63a45de2052892229c3e33 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 2
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Max. off-state voltage: 1.2kV
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Технічний опис SKIIP 22NAB12T4V2 25232140 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Mechanical mounting: screw, Electrical mounting: Press-Fit, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 2, Collector current: 15A, Gate-emitter voltage: ±20V, Pulsed collector current: 45A, Max. off-state voltage: 1.2kV.