SKIIP 25NAB066V1 25230620 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Gate-emitter voltage: ±20V
Power: 4kW
Collector current: 30A
Pulsed collector current: 60A
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 2
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SKIIP 25NAB066V1 25230620 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A, Max. off-state voltage: 0.6kV, Gate-emitter voltage: ±20V, Power: 4kW, Collector current: 30A, Pulsed collector current: 60A, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 2, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Electrical mounting: Press-Fit, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 25NAB066V1 25230620
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SKIIP 25NAB066V1 25230620 | Виробник : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A Max. off-state voltage: 0.6kV Gate-emitter voltage: ±20V Power: 4kW Collector current: 30A Pulsed collector current: 60A Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: MiniSKiiP® 2 Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Electrical mounting: Press-Fit Mechanical mounting: screw |
товару немає в наявності |