Продукція > SEMIKRON DANFOSS > SKIIP 25NEB066V1 25232400

SKIIP 25NEB066V1 25232400 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CAEDA05A698A0D6&compId=SKIIP25NEB066V1.pdf?ci_sign=15e9c9ac55821dee5e4149ab40bd290989c95e52 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 30A
Power: 4kW
Case: MiniSKiiP® 2
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mechanical mounting: screw
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Технічний опис SKIIP 25NEB066V1 25232400 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 30A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Max. off-state voltage: 0.6kV, Collector current: 30A, Power: 4kW, Case: MiniSKiiP® 2, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Mechanical mounting: screw.