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SKIIP 37NAB12T4V10 25231670 SEMIKRON DANFOSS

SEMIKRON_Product_Variants.pdf SKIIP37NAB12T4V10.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Power: 22kW
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 3
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
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Технічний опис SKIIP 37NAB12T4V10 25231670 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 225A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit, Power: 22kW, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 3, Gate-emitter voltage: ±20V, Collector current: 75A, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge.