Продукція > SEMIKRON DANFOSS > SKIIP 38AC12T4V1 25231600

SKIIP 38AC12T4V1 25231600 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power: 22kW
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw

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Технічний опис SKIIP 38AC12T4V1 25231600 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Power: 22kW, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV, Topology: IGBT three-phase bridge; NTC thermistor, Semiconductor structure: transistor/transistor, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Electrical mounting: Press-Fit, Mechanical mounting: screw.