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SKIIP 38GB07E3V1 25240719 SEMIKRON DANFOSS

SKIIP38GB07E3V1.pdf SEMIKRON_Product_Variants.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 300A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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Технічний опис SKIIP 38GB07E3V1 25240719 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; NTC thermistor, Max. off-state voltage: 650V, Collector current: 300A, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw.