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SKIIP 38GB12F4V19 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Case: MiniSKiiP® 3
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: transistor/transistor

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Технічний опис SKIIP 38GB12F4V19 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Max. off-state voltage: 1.2kV, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; NTC thermistor, Case: MiniSKiiP® 3, Electrical mounting: Press-Fit, Mechanical mounting: screw, Semiconductor structure: transistor/transistor.