SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 3
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power: 11kW
кількість в упаковці: 1 шт
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Технічний опис SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 3, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Power: 11kW, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 38NAB066V1 25230650
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SKIIP 38NAB066V1 25230650 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Case: MiniSKiiP® 3 Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power: 11kW |
товару немає в наявності |