SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 100A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Power: 11kW
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 3
кількість в упаковці: 1 шт
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Технічний опис SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 100A, Pulsed collector current: 200A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Power: 11kW, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 3, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 38NAB066V1 25230650
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SKIIP 38NAB066V1 25230650 | Виробник : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW Mechanical mounting: screw Electrical mounting: Press-Fit Collector current: 100A Pulsed collector current: 200A Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Power: 11kW Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Case: MiniSKiiP® 3 |
товару немає в наявності |