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SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS

SEMIKRON_Product_Variants.pdf SKIIP38NAB066V1.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 3
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Power: 11kW
Gate-emitter voltage: ±20V
Collector current: 100A
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Технічний опис SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 3, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 200A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Power: 11kW, Gate-emitter voltage: ±20V, Collector current: 100A.