Продукція > SEMIKRON DANFOSS > SKIIP 39AC12T7V1 25231070

SKIIP 39AC12T7V1 25231070 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CB37E47E86800D6&compId=SKIIP39AC12T7V1.pdf?ci_sign=f796dfa1b84354db20aa3c6acfadc7eb808111f8 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: MiniSKiiP® 3
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Semiconductor structure: transistor/transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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Технічний опис SKIIP 39AC12T7V1 25231070 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: MiniSKiiP® 3, Electrical mounting: Press-Fit, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; thermistor, Semiconductor structure: transistor/transistor, Collector current: 150A, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV.