Продукція > SEMIKRON DANFOSS > SKIIP 39MLI12T4V1 25230510

SKIIP 39MLI12T4V1 25230510 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE71A1F8B4C00D6&compId=SKIIP39MLI12T4V1.pdf?ci_sign=7a2fe924affb3b2681e3ae547ac48250ffc9052e Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 150A; Press-Fit
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 150A
Pulsed collector current: 450A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Topology: NTC thermistor; three-level inverter; single-phase
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 3
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Технічний опис SKIIP 39MLI12T4V1 25230510 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 150A; Press-Fit, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 150A, Pulsed collector current: 450A, Gate-emitter voltage: ±20V, Max. off-state voltage: 1.2kV, Topology: NTC thermistor; three-level inverter; single-phase, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 3.