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SKIIP 39MLI12T4V1 25230510 SEMIKRON DANFOSS

SKIIP39MLI12T4V1.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 150A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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Технічний опис SKIIP 39MLI12T4V1 25230510 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 150A; Press-Fit, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: NTC thermistor; three-level inverter; single-phase, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw.