SKIM301MLI12E4 23918880 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; SKiM4; screw
Case: SKiM4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: screw
Mechanical mounting: screw
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис SKIM301MLI12E4 23918880 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; SKiM4; screw, Case: SKiM4, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: screw, Mechanical mounting: screw, Topology: NTC thermistor; three-level inverter; single-phase, Type of semiconductor module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції SKIM301MLI12E4 23918880
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SKIM301MLI12E4 23918880 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; SKiM4; screw Case: SKiM4 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 900A Application: for UPS; Inverter; photovoltaics Electrical mounting: screw Mechanical mounting: screw Topology: NTC thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT |
товару немає в наявності |