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SKM100GB07E3 22895634 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: SEMITRANS2
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge

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Технічний опис SKM100GB07E3 22895634 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Gate-emitter voltage: ±20V, Type of semiconductor module: IGBT, Collector current: 100A, Pulsed collector current: 300A, Application: for UPS; Inverter; photovoltaics, Semiconductor structure: transistor/transistor, Max. off-state voltage: 650V, Case: SEMITRANS2, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: IGBT half-bridge.