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SKM100GB07E3 22895634 SEMIKRON DANFOSS


SKM100GB07E3.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: SEMITRANS2
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
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Технічний опис SKM100GB07E3 22895634 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Case: SEMITRANS2, Max. off-state voltage: 650V, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Pulsed collector current: 300A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Collector current: 100A, Topology: IGBT half-bridge, Type of semiconductor module: IGBT.