Продукція > SEMIKRON DANFOSS > SKM100GB12T4G 22892030

SKM100GB12T4G 22892030 SEMIKRON DANFOSS


SKM100GB12T4G.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 118A
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Collector current: 118A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SKM100GB12T4G 22892030 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 118A, Case: SEMITRANS3, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Pulsed collector current: 300A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Collector current: 118A, Topology: IGBT half-bridge, Type of semiconductor module: IGBT.