SKM200GAL17E4 22895110 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 248A
Case: SEMITRANS3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1170A
Mechanical mounting: screw
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10337.86 грн |
| 3+ | 8685.21 грн |
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Технічний опис SKM200GAL17E4 22895110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.7kV, Collector current: 248A, Case: SEMITRANS3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1170A, Mechanical mounting: screw.