Продукція > SEMIKRON DANFOSS > SKM200GB126D 22890631

SKM200GB126D 22890631 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE8F6D4A378E0D6&compId=SKM200GB126D.pdf?ci_sign=4eae4b13aa15c9b3227d3fef45cd3e03c05d1084 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Case: SEMITRANS3
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
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Технічний опис SKM200GB126D 22890631 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Case: SEMITRANS3, Collector current: 150A, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Electrical mounting: FASTON connectors; screw.