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SKM25GAH125D 21917990 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: SEMITRANS6
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mechanical mounting: screw

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Технічний опис SKM25GAH125D 21917990 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 25A, Case: SEMITRANS6, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors, Gate-emitter voltage: ±20V, Pulsed collector current: 50A, Mechanical mounting: screw.