Продукція > SEMIKRON DANFOSS > SKM50GB12V 22892003
SKM50GB12V 22892003

SKM50GB12V 22892003 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB90B41EDABE976629874A40C7&compId=SKM50GB12V.pdf?ci_sign=76d542bb5e990ac6a9d319696ef1851ab5303fa4 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
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Технічний опис SKM50GB12V 22892003 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS2, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 150A, Max. off-state voltage: 1.2kV.