Продукція > SEMIKRON DANFOSS > SKM600GB066D 21915620

SKM600GB066D 21915620 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE9500C303800D6&compId=SKM600GB066D.pdf?ci_sign=19f6f1d7235537113ef50303c6bba92a5faf4142 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Collector current: 600A
Pulsed collector current: 800A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: SEMITRANS3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SKM600GB066D 21915620 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Collector current: 600A, Pulsed collector current: 800A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: SEMITRANS3, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, кількість в упаковці: 1 шт.

Інші пропозиції SKM600GB066D 21915620

Фото Назва Виробник Інформація Доступність
Ціна
SKM600GB066D 21915620 Виробник : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE9500C303800D6&compId=SKM600GB066D.pdf?ci_sign=19f6f1d7235537113ef50303c6bba92a5faf4142 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Collector current: 600A
Pulsed collector current: 800A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: SEMITRANS3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.