SKW15N120FKSA1

SKW15N120FKSA1 Infineon Technologies


662skw15n120_rev2_3g.pdffolderiddb3a304412b407950112b408e8c90004file.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 30A 198000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис SKW15N120FKSA1 Infineon Technologies

Description: IGBT 1200V 30A 198W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 18ns/580ns, Switching Energy: 1.9mJ, Test Condition: 800V, 15A, 33Ohm, 15V, Gate Charge: 130 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 198 W.

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SKW15N120FKSA1 SKW15N120FKSA1 Виробник : Infineon Technologies SKW15N120.pdf Description: IGBT 1200V 30A 198W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/580ns
Switching Energy: 1.9mJ
Test Condition: 800V, 15A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 198 W
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